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Part Datasheet Search > MOSFETs > Infineon > IRF7465PBF Datasheet PDF
IRF7465PBF
Part 3D Model
$ 0.139
IRF7465PBF Datasheet PDF (8 Pages)
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IRF7465PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Power Rating
2.5 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.28 Ω
Polarity
N-Channel
Power Dissipation
2.5 W
Threshold Voltage
5.5 V
Drain to Source Voltage (Vds)
150 V
Continuous Drain Current (Ids)
1.9A
Rise Time
1.2 ns
Input Capacitance (Ciss)
330pF @25V(Vds)
Fall Time
9 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta)

IRF7465PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Rail, Tube
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.5 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7465PBF Documents

Infineon
8 Pages / 0.12 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
12 Pages / 0.56 MByte

IRF7465 Documents

Infineon
SOIC N-CH 150V 1.9A
International Rectifier
MOSFET N-CH 150V 1.9A 8-SOIC
IRF
Power MOSFET(Vdss=150V, Id=1.9A)
Infineon
SOIC N-CH 150V 1.9A
Infineon
SOIC N-CH 150V 1.9A
International Rectifier
Trans MOSFET N-CH 150V 1.9A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 150V 1.9A 8Pin SOIC Tube
International Rectifier
Trans MOSFET N-CH 150V 1.9A 8Pin SOIC T/R
Infineon
SOIC N-CH 150V 1.9A
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