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IRF7493TR
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IRF7493TR Datasheet PDF (9 Pages)
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IRF7493TR Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Voltage Rating (DC)
80.0 V
Current Rating
9.30 A
Case/Package
SOIC-8
Polarity
N-Channel
Power Dissipation
2.5W (Tc)
Drain to Source Voltage (Vds)
80 V
Breakdown Voltage (Drain to Source)
80.0 V
Continuous Drain Current (Ids)
9.30 A
Rise Time
7.5 ns
Input Capacitance (Ciss)
1510pF @25V(Vds)
Fall Time
12 ns
Power Dissipation (Max)
2.5W (Tc)

IRF7493TR Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7493TR Documents

Infineon
9 Pages / 0.15 MByte
Infineon
7 Pages / 0.14 MByte

IRF7493 Documents

International Rectifier
Trans MOSFET N-CH 80V 9.3A 8Pin SOIC
Infineon
SOIC N-CH 80V 9.3A
IRF
HEXFET Power MOSFET
Infineon
SOIC N-CH 80V 9.3A
Infineon
SOIC N-CH 80V 9.3A
International Rectifier
Trans MOSFET N-CH 80V 9.3A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 80V 9.3A 8Pin SOIC Trans MOSFET N-CH 80V 9.3A 8Pin SOIC Trans MOSFET N-CH 80V 9.3A 8Pin SOIC
International Rectifier
MOSFET N-CH 80V 9.3A 8-SOIC
Infineon
SOIC N-CH 80V 9.3A
Infineon
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
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