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Part Datasheet Search > MOSFETs > Infineon > IRF7495PBF Datasheet PDF
IRF7495PBF
Part 3D Model
$ 0.715
IRF7495PBF Datasheet PDF (8 Pages)
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IRF7495PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Power Rating
2.5 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.022 Ω
Polarity
N-Channel
Power Dissipation
2.5 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
7.3A
Rise Time
13 ns
Input Capacitance (Ciss)
1530pF @25V(Vds)
Input Power (Max)
2.5 W
Fall Time
36 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta)

IRF7495PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.5 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7495PBF Documents

Infineon
8 Pages / 0.14 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
1 Pages / 0.13 MByte

IRF7495 Documents

International Rectifier
Trans MOSFET N-CH 100V 7.3A 8Pin SOIC T/R
Infineon
SOIC N-CH 100V 7.3A
IRF
HEXFET Power MOSFET
Infineon
SOIC N-CH 100V 7.3A
Infineon
SOIC N-CH 100V 7.3A
International Rectifier
Trans MOSFET N-CH 100V 7.3A 8Pin SOIC T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 18Milliohms; ID 7.3A; SO-8; PD 2.5W; VGS +/-20
International Rectifier
Trans MOSFET N-CH 100V 7.3A 8Pin SOIC T/R
Infineon
SOIC N-CH 100V 7.3A
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