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Part Datasheet Search > MOSFETs > Infineon > IRF7501TR Datasheet PDF
IRF7501TR
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IRF7501TR Datasheet PDF (7 Pages)
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IRF7501TR Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Voltage Rating (DC)
20.0 V
Current Rating
2.40 A
Case/Package
TSSOP-8
Polarity
Dual N-Channel
Part Family
IRF7501
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Drain to Source)
20.0 V
Continuous Drain Current (Ids)
2.40 A
Rise Time
24 ns
Input Capacitance (Ciss)
260pF @15V(Vds)
Input Power (Max)
1.25 W
Fall Time
16 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1250 mW

IRF7501TR Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
End of Life
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7501TR Documents

Infineon
7 Pages / 0.14 MByte
Infineon
9 Pages / 0.2 MByte
Infineon
1 Pages / 0.13 MByte

IRF7501 Documents

International Rectifier
20V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package
Infineon
Micro N-CH 20V 2.4A
IRF
Power MOSFET(Vdss=20V, Rds(on)=0.135Ω)
Infineon
Micro N-CH 20V 2.4A
International Rectifier
Trans MOSFET N-CH 20V 2.4A 8Pin Micro T/R
Infineon
Micro N-CH 20V 2.4A
International Rectifier
MOSFET, DUAL, NN, MICRO-8; Transistor Type: MOSFET; Transistor Polarity: Dual N; Voltage, Vds Typ: 20V; Current, Id C...
International Rectifier
MOSFET DUAL N-CH 20V 2.4A MICRO8
Infineon
Micro N-CH 20V 2.4A
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