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IRF7509PBF
$ 0.262
IRF7509PBF Datasheet PDF (8 Pages)
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IRF7509PBF Specifications

TYPE
DESCRIPTION
Case/Package
µSOIC
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
110 mΩ
Polarity
N+P
Power Dissipation
1.25 W
Threshold Voltage
1 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
2.7A/2A
Operating Temperature (Max)
150 ℃

IRF7509PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active

IRF7509PBF Documents

Infineon
8 Pages / 0.23 MByte
Infineon
11 Pages / 0.21 MByte

IRF7509 Documents

International Rectifier
30V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package
Infineon
Micro N+P 30V 2.7A/2A
IRF
Power MOSFET(Vdss=+-30V)
Infineon
Micro N+P 30V 2.7A/2A
International Rectifier
Trans MOSFET N/P-CH 30V 2.7A/2A 8Pin Micro T/R
Infineon
Micro N+P 30V 2.7A/2A
International Rectifier
Trans MOSFET N/P-CH 30V 2.7A/2A 8Pin Micro
International Rectifier
MOSFET N+P 30V 2A MICRO8
Infineon
Micro N+P 30V 2.7A/2A
Infineon
30V 1N-1P Channel HEXFET Power MOSFET in a Micro-8 package
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