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Part Datasheet Search > MOSFETs > Infineon > IRF7601TRPBF Datasheet PDF
IRF7601TRPBF
$ 0.528
IRF7601TRPBF Datasheet PDF (8 Pages)
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IRF7601TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
Micro-8
Power Rating
1.8 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.035 Ω
Polarity
N-Channel
Power Dissipation
1.8 W
Threshold Voltage
700 mV
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
5.7A
Rise Time
47 ns
Input Capacitance (Ciss)
650pF @15V(Vds)
Input Power (Max)
1.8 W
Fall Time
32 ns
Operating Temperature (Max)
150 ℃
Power Dissipation (Max)
1.8W (Ta)

IRF7601TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7601TRPBF Documents

Infineon
8 Pages / 0.2 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.14 MByte

IRF7601 Documents

International Rectifier
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Infineon
Micro N-CH 20V 5.7A
IRF
Power MOSFET(Vdss=20V, Rds(on)=0.035Ω)
Infineon
Micro N-CH 20V 5.7A
Infineon
Micro N-CH 20V 5.7A
International Rectifier
Trans MOSFET N-CH 20V 5.7A 8Pin Micro T/R
International Rectifier
MOSFET 20V 1 N-CH HEXFET 35mOhms 14NC
International Rectifier
Trans MOSFET N-CH Si 20V 5.7A 8Pin Micro T/R
Infineon
Micro N-CH 20V 5.7A
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