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Part Datasheet Search > MOSFETs > Infineon > IRF7739L1TRPBF Datasheet PDF
IRF7739L1TRPBF
$ 2.496
IRF7739L1TRPBF Datasheet PDF (10 Pages)
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IRF7739L1TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
15 Pin
Case/Package
Direct-FET
Power Rating
125 W
Number of Positions
15 Position
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
2.8 V
Drain to Source Voltage (Vds)
40 V
Continuous Drain Current (Ids)
46A
Rise Time
71 ns
Input Capacitance (Ciss)
11880pF @25V(Vds)
Fall Time
42 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.8W (Ta), 125W (Tc)

IRF7739L1TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
9.15 mm
Size-Width
7.1 mm
Size-Height
0.74 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF7739L1TRPBF Documents

Infineon
10 Pages / 0.26 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte

IRF7739L1 Documents

Infineon
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 270 amperes optimized with low on resistance.
Infineon
Direct-FET N-CH 40V 46A
International Rectifier
MOSFET 40V N-Ch 270A 1mOhm 220NC
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