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Part Datasheet Search > MOSFETs > Infineon > IRF7749L2TRPBF Datasheet PDF
IRF7749L2TRPBF
$ 2.227
IRF7749L2TRPBF Datasheet PDF (11 Pages)
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IRF7749L2TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
Direct-FET
Power Rating
125 W
Number of Channels
1 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0011 Ω
Polarity
N-Channel
Power Dissipation
3.3 W
Threshold Voltage
2.9 V
Input Capacitance
12320 pF
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60 V
Continuous Drain Current (Ids)
33A
Rise Time
43 ns
Input Capacitance (Ciss)
12320pF @25V(Vds)
Fall Time
39 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
3.3W (Ta), 125W (Tc)

IRF7749L2TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
9.15 mm
Size-Width
7.1 mm
Size-Height
0.74 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF7749L2TRPBF Documents

Infineon
11 Pages / 0.26 MByte
Infineon
22 Pages / 0.35 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.32 MByte

IRF7749L2 Documents

Infineon
Direct-FET N-CH 60V 33A
International Rectifier
MOSFET 60V 1 N-CH HEXFET 1.5mOhms 200NC
International Rectifier
MOSFET 60V 200A 1.5mOhm 220NC Qg
Infineon
Direct-FET N-CH 60V 200A
International Rectifier
Directfet Power Mosfet
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