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Part Datasheet Search > MOSFETs > Infineon > IRF7759L2TRPBF Datasheet PDF
IRF7759L2TRPBF
$ 2.205
IRF7759L2TRPBF Datasheet PDF (11 Pages)
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IRF7759L2TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
15 Pin
Case/Package
Direct-FET
Power Rating
125 W
Number of Positions
15 Position
Drain to Source Resistance (on) (Rds)
0.0018 Ω
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
75 V
Continuous Drain Current (Ids)
160A
Rise Time
87 ns
Input Capacitance (Ciss)
12222pF @25V(Vds)
Fall Time
33 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.3W (Ta), 125W (Tc)

IRF7759L2TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
9.15 mm
Size-Width
7.1 mm
Size-Height
0.74 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF7759L2TRPBF Documents

Infineon
11 Pages / 0.26 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.19 MByte

IRF7759L2 Documents

Infineon
A 75V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 26 amperes optimized with low on resistance.
Infineon
Direct-FET N-CH 75V 160A
International Rectifier
MOSFET 75V 1 N-CH HEXFET 2.3mOhms 200NC
International Rectifier
Trans MOSFET N-CH 75V 160A 15Pin Direct-FET L8 T/R
Infineon
Direct-FET N-CH 75V 160A
International Rectifier
Directfet Power Mosfet
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