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Part Datasheet Search > MOSFETs > Infineon > IRF7779L2TRPBF Datasheet PDF
IRF7779L2TRPBF
$ 3.232
IRF7779L2TRPBF Datasheet PDF (11 Pages)
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IRF7779L2TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
15 Pin
Case/Package
Direct-FET
Power Rating
125 W
Number of Positions
15 Position
Drain to Source Resistance (on) (Rds)
0.009 Ω
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
4 V
Input Capacitance
6660 pF
Drain to Source Voltage (Vds)
150 V
Continuous Drain Current (Ids)
67A
Rise Time
19 ns
Input Capacitance (Ciss)
6660pF @25V(Vds)
Fall Time
12 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.3W (Ta), 125W (Tc)

IRF7779L2TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF7779L2TRPBF Documents

Infineon
11 Pages / 0.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.19 MByte

IRF7779L2 Documents

Infineon
A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 11 amperes optimized with low on resistance.
Infineon
Direct-FET N-CH 150V 67A
International Rectifier
MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11NC
International Rectifier
MOSFET 150V 67A 11mOhm 97NC Qg
Infineon
Direct-FET N-CH 150V 67A
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