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Part Datasheet Search > MOSFETs > Infineon > IRF7815PBF Datasheet PDF
IRF7815PBF
Part 3D Model
$ 0.688
IRF7815PBF Datasheet PDF (9 Pages)
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IRF7815PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Power Rating
2.5 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.034 Ω
Polarity
N-Channel
Power Dissipation
2.5 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
150 V
Continuous Drain Current (Ids)
5.1A
Rise Time
3.2 ns
Input Capacitance (Ciss)
1647pF @75V(Vds)
Fall Time
8.3 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta)

IRF7815PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.5 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7815PBF Documents

Infineon
9 Pages / 0.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
2 Pages / 0.07 MByte

IRF7815 Documents

Infineon
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC N-CH 150V 5.1A
Infineon
SOIC N-CH 150V 5.1A
International Rectifier
Trans MOSFET N-CH 150V 5.1A 8Pin SOIC Tube
International Rectifier
Trans MOSFET N-CH 150V 5.1A 8Pin SOIC T/R
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