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Part Datasheet Search > MOSFETs > Infineon > IRF7820TRPBF Datasheet PDF
IRF7820TRPBF
Part 3D Model
$ 0.54
IRF7820TRPBF Datasheet PDF (10 Pages)
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IRF7820TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Number of Channels
1 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0625 Ω
Polarity
N-Channel
Power Dissipation
2.5 W
Threshold Voltage
4 V
Input Capacitance
1750 pF
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Continuous Drain Current (Ids)
3.7A
Rise Time
3.2 ns
Input Capacitance (Ciss)
1750pF @100V(Vds)
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
2.5W (Ta)

IRF7820TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5 mm
Size-Width
3.9 mm
Size-Height
1.75 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7820TRPBF Documents

Infineon
10 Pages / 0.22 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.14 MByte

IRF7820 Documents

Infineon
200V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC N-CH 200V 3.7A
Infineon
SOIC N-CH 200V 3.7A
International Rectifier
Trans MOSFET N-CH 200V 3.7A 8Pin SOIC Tube
International Rectifier
MOSFET 200V, 3.7A, 78mOhm 29NC Qg, SO-8
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