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Part Datasheet Search > MOSFETs > Infineon > IRF7853TRPBF Datasheet PDF
IRF7853TRPBF
Part 3D Model
$ 0.424
IRF7853TRPBF Datasheet PDF (8 Pages)
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IRF7853TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Power Rating
2.5 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.018 Ω
Polarity
N-Channel
Power Dissipation
2.5 W
Threshold Voltage
4.9 V
Input Capacitance
1640 pF
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
8.3A
Rise Time
6.6 ns
Input Capacitance (Ciss)
1640pF @25V(Vds)
Input Power (Max)
2.5 W
Fall Time
6 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta)

IRF7853TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5 mm
Size-Width
3.9 mm
Size-Height
1.75 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7853TRPBF Documents

Infineon
8 Pages / 0.2 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.14 MByte

IRF7853 Documents

Infineon
SOIC N-CH 100V 8.3A
International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package
Infineon
SOIC N-CH 100V 8.3A
Infineon
SOIC N-CH 100V 8.3A
International Rectifier
Trans MOSFET N-CH 100V 8.3A 8Pin SOIC T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 14.4 Milliohms; ID 8.3A; SO-8; PD 2.5W; gFS 11S
TT Electronics Resistors
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