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Part Datasheet Search > MOSFETs > Infineon > IRF7862TRPBF Datasheet PDF
IRF7862TRPBF
Part 3D Model
$ 0.242
IRF7862TRPBF Datasheet PDF (9 Pages)
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IRF7862TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Power Rating
2.5 W
Number of Channels
1 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
4.5 mΩ
Polarity
N-Channel
Power Dissipation
2.5 W
Threshold Voltage
2.35 V
Input Capacitance
4090 pF
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30 V
Continuous Drain Current (Ids)
21A
Rise Time
19 ns
Input Capacitance (Ciss)
4090pF @15V(Vds)
Input Power (Max)
2.5 W
Fall Time
11 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta)

IRF7862TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
4.9 mm
Size-Width
3.9 mm
Size-Height
1.75 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7862TRPBF Documents

Infineon
9 Pages / 0.24 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.14 MByte

IRF7862 Documents

Infineon
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC N-CH 30V 21A
Infineon
SOIC N-CH 30V 21A
International Rectifier
Trans MOSFET N-CH 30V 21A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 30V 21A 8Pin SOIC Tube
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