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Part Datasheet Search > MOSFETs > Infineon > IRF7904PBF Datasheet PDF
IRF7904PBF
Part 3D Model
$ 0.587
IRF7904PBF Datasheet PDF (10 Pages)
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IRF7904PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0086 Ω
Polarity
Dual N-Channel
Power Dissipation
2 W
Threshold Voltage
2.25 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
7.6A/11A
Input Capacitance (Ciss)
910pF @15V(Vds)
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1.4 W

IRF7904PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.5 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7904PBF Documents

Infineon
10 Pages / 0.24 MByte
Infineon
5 Pages / 0.08 MByte
Infineon
1 Pages / 0.13 MByte

IRF7904 Documents

International Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC N-CH 30V 7.6A/11A
Infineon
SOIC N-CH 30V 7.6A/11A
International Rectifier
Trans MOSFET N-CH 30V 7.6A/11A 8Pin SOIC T/R
Infineon
SOIC N-CH 30V 7.6A/11A
International Rectifier
Trans MOSFET N-CH 30V 7.6A/11A 8Pin SOIC Tube
Infineon
30V Dual N Channel HEXFET Power MOSFET in a SO-8 package
Infineon
30V Dual N Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer markets
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