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Part Datasheet Search > MOSFETs > Infineon > IRF7907TRPBF Datasheet PDF
IRF7907TRPBF
Part 3D Model
$ 0.538
IRF7907TRPBF Datasheet PDF (10 Pages)
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IRF7907TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Power Rating
2 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0098 Ω
Polarity
Dual N-Channel
Power Dissipation
2 W
Threshold Voltage
1.8 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
9.1A/11A
Input Capacitance (Ciss)
850pF @15V(Vds)
Input Power (Max)
2 W
Operating Temperature (Max)
150 ℃
Power Dissipation (Max)
2 W

IRF7907TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7907TRPBF Documents

Infineon
10 Pages / 0.31 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.14 MByte

IRF7907 Documents

International Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package
Infineon
SOIC N-CH 30V 9.1A/11A
Infineon
SOIC N-CH 30V 9.1A/11A
Infineon
SOIC N-CH 30V 9.1A/11A
International Rectifier
Trans MOSFET N-CH 30V 9.1A/11A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 30V 9.1A/11A 8Pin SOIC Tube
Infineon
SOIC N-CH 30V 9.1A/11A
Infineon
SOIC N-CH 30V 9.1A/11A
IFA
Dual N-Channel 30V 16.4mΩ 6.7NC Surface Mount Hexfet Power Mosfet - SOIC-8
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