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Part Datasheet Search > MOSFETs > Infineon > IRF8113GPBF Datasheet PDF
IRF8113GPBF
Part 3D Model
$ 0.144
IRF8113GPBF Datasheet PDF (10 Pages)
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IRF8113GPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Polarity
N-CH
Power Dissipation
2.5W (Ta)
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
17.2A
Rise Time
8.9 ns
Input Capacitance (Ciss)
2910pF @15V(Vds)
Fall Time
3.5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta)

IRF8113GPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF8113GPBF Documents

Infineon
10 Pages / 0.27 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
5 Pages / 0.08 MByte

IRF8113 Documents

Infineon
SOIC N-CH 30V 17.2A
International Rectifier
MOSFET N-CH 30V 17.2A 8-SOIC
IRF
Power MOSFET
Infineon
SOIC N-CH 30V 17.2A
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 4.7Milliohms; ID 17.2A; SO-8; PD 2.5W; VGS +/-2
Infineon
SOIC N-CH 30V 17.2A
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 4.7Milliohms; ID 17.2A; SO-8; PD 2.5W; VGS +/-2
International Rectifier
Trans MOSFET N-CH 30V 17.2A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 30V 17.2A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 30V 17.2A 8Pin SOIC
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