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IRF820SPBF Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

TO-263

Description:

MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 3Ω; ID 2.5A; SMD-220; PD 50W; VGS +/-20V

Pictures:

3D Model

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Pinout

Product Pictures

Documentation:

IRF820SPBF Datasheet (4 Pages)

Package Outline Dimension on3 Page

IRF820SPBF Datasheet PDF (4 Pages)

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IRF820SPBF Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Voltage Rating (DC)

500 V

Current Rating

2.50 A

Case/Package

TO-263

Drain to Source Resistance (on) (Rds)

3 Ω

Polarity

N-Channel

Power Dissipation

50 W

Threshold Voltage

4 V

Input Capacitance

360pF @25V

Drain to Source Voltage (Vds)

500 V

Breakdown Voltage (Drain to Source)

500 V

Continuous Drain Current (Ids)

2.50 A

Rise Time

8.6 ns

Input Capacitance (Ciss)

360pF @25V(Vds)

Fall Time

16 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

3100 mW

View Datasheet >

IRF820SPBF Size & Package

TYPE

DESCRIPTION

Packaging

Tube

Size-Length

10.67 mm

Size-Height

4.83 mm

Operating Temperature

-55℃ ~ 150℃

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IRF820SPBF Environmental

IRF820SPBF Export Classifications

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IRF820SPBF Datasheet

Vishay Semiconductor

4 Pages / 0.19 MByte

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