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Part Datasheet Search > MOSFETs > Infineon > IRF8301MTRPBF Datasheet PDF
IRF8301MTRPBF
$ 1.363
IRF8301MTRPBF Datasheet PDF (10 Pages)
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IRF8301MTRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
7 Pin
Case/Package
Direct-FET
Power Rating
89 W
Number of Positions
7 Position
Drain to Source Resistance (on) (Rds)
0.0013 Ω
Polarity
N-Channel
Power Dissipation
89 W
Threshold Voltage
1.7 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
34A
Rise Time
30 ns
Input Capacitance (Ciss)
6140pF @15V(Vds)
Fall Time
17 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)

IRF8301MTRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
6.35 mm
Size-Width
5.05 mm
Size-Height
0.7 mm
Operating Temperature
-40℃ ~ 150℃ (TJ)

IRF8301MTRPBF Documents

Infineon
10 Pages / 0.33 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.19 MByte

IRF8301 Documents

Infineon
Direct-FET N-CH 30V 34A
International Rectifier
Trans MOSFET N-CH 30V 34A 7Pin Direct-FET MT T/R
Infineon
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance.
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