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Part Datasheet Search > MOSFETs > Infineon > IRF8308MTRPBF Datasheet PDF
IRF8308MTRPBF
$ 1.061
IRF8308MTRPBF Datasheet PDF (10 Pages)
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IRF8308MTRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
7 Pin
Case/Package
Direct-FET
Drain to Source Resistance (on) (Rds)
0.0019 Ω
Polarity
N-Channel
Power Dissipation
2.8 W
Threshold Voltage
1.8 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
27A
Rise Time
19 ns
Input Capacitance (Ciss)
4404pF @15V(Vds)
Fall Time
16 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)

IRF8308MTRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-40℃ ~ 150℃ (TJ)

IRF8308MTRPBF Documents

Infineon
10 Pages / 0.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.11 MByte

IRF8308 Documents

Infineon
Direct-FET N-CH 30V 27A
International Rectifier
IRF8308 Series Single N Channel 30V 27A 1.9mOhm SMT Power Mosfet
International Rectifier
Trans MOSFET N-CH 30V 27A 7Pin Direct-FET MX T/R
Infineon
Direct-FET N-CH 30V 27A
Infineon
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance.
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