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IRF830ASPBF
$ 1.128
IRF830ASPBF Datasheet PDF (8 Pages)
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IRF830ASPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Drain to Source Resistance (on) (Rds)
1.4 Ω
Polarity
N-Channel
Power Dissipation
3.1 W
Drain to Source Voltage (Vds)
500 V
Continuous Drain Current (Ids)
5.00 A
Rise Time
21 ns
Input Capacitance (Ciss)
620pF @25V(Vds)
Input Power (Max)
3.1 W
Fall Time
15 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.1 W

IRF830ASPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.67 mm
Size-Width
9.65 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
2000

IRF830ASPBF Documents

VISHAY
8 Pages / 0.14 MByte
VISHAY
16 Pages / 0.29 MByte

IRF830 Documents

ST Microelectronics
Trans MOSFET N-CH 500V 4.5A 3Pin(3+Tab) TO-220
International Rectifier
HEXFET, N채널, Vd = 500V, Rds = 1.5Ω, Id = 4.5A, TO-220
VISHAY
Trans MOSFET N-CH 500V 4.5A 3Pin(3+Tab) TO-220-1
Vishay Siliconix
MOSFET N-CH 500V 4.5A TO-220AB
Fairchild
Trans MOSFET N-CH 500V 4.5A 3Pin TO-220AB
Advanced Power Electronics
Trans MOSFET N-CH 500V 4.5A 3Pin(3+Tab) TO-220
Harris
MOSFET N-CH 500V 4.5A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 500V 4.5A 3Pin(3+Tab) TO-220-1
Intersil
4.5A, 500V, 1.5Ω, N-Channel Power MOSFET
ON Semiconductor
Trans MOSFET N-CH 500V 4.5A 3Pin(3+Tab) TO-220 Rail
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