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Part Datasheet Search > MOSFETs > Infineon > IRF8313PBF Datasheet PDF
IRF8313PBF
Part 3D Model
$ 0.384
IRF8313PBF Datasheet PDF (10 Pages)
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IRF8313PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Power Rating
2 W
Polarity
N-Channel, Dual N-Channel
Power Dissipation
2 W
Part Family
IRF8313
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
8.10 A
Rise Time
9.9 ns
Input Capacitance (Ciss)
760pF @15V(Vds)
Input Power (Max)
2 W
Fall Time
4.2 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2 W

IRF8313PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.5 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF8313PBF Documents

Infineon
10 Pages / 0.24 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte

IRF8313 Documents

Infineon
SOIC N-CH 30V 9.7A
Infineon
SOIC N-CH 30V 9.7A
International Rectifier
Trans MOSFET N-CH Si 30V 9.7A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 30V 9.7A 8Pin SOIC Tube
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