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Part Datasheet Search > MOSFETs > International Rectifier > IRF8910PBF Datasheet PDF
IRF8910PBF
Part 3D Model
$ 0.503
IRF8910PBF Datasheet PDF (10 Pages)
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IRF8910PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Voltage Rating (DC)
20.0 V
Current Rating
10.0 A
Case/Package
SOIC-8
Drain to Source Resistance (on) (Rds)
0.0134 Ω
Polarity
N-Channel, Dual N-Channel
Power Dissipation
2 W
Part Family
IRF8910
Threshold Voltage
2.55 V
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Drain to Source)
20 V
Continuous Drain Current (Ids)
10.0 A
Rise Time
10.0 ns
Thermal Resistance
62.5℃/W (RθJA)
Input Capacitance (Ciss)
960pF @10V(Vds)
Input Power (Max)
2 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

IRF8910PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail, Tube
Operating Temperature
-55℃ ~ 150℃

IRF8910PBF Documents

International Rectifier
10 Pages / 0.27 MByte

IRF8910 Documents

Infineon
SOIC N-CH 20V 10A
International Rectifier
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Vishay Intertechnology
Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8
IRF
HEXFET Power MOSFET
Infineon
SOIC N-CH 20V 10A
Infineon
SOIC N-CH 20V 10A
International Rectifier
Trans MOSFET N-CH 20V 10A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 20V 10A 8Pin SOIC Tube
Infineon
SOIC N-CH 20V 10A
International Rectifier
Trans MOSFET N-CH 20V 10A 8Pin SOIC
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