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Part Datasheet Search > MOSFETs > Infineon > IRF9333TRPBF Datasheet PDF
IRF9333TRPBF
Part 3D Model
$ 0.142
IRF9333TRPBF Datasheet PDF (8 Pages)
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IRF9333TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Power Rating
2.5 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0156 Ω
Polarity
P-Channel
Power Dissipation
2.5 W
Part Family
IRF9333
Input Capacitance
1110 pF
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
-9.20 A
Rise Time
44 ns
Input Capacitance (Ciss)
1110pF @25V(Vds)
Input Power (Max)
2.5 W
Fall Time
49 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta)

IRF9333TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.5 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF9333TRPBF Documents

Infineon
8 Pages / 0.3 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
6 Pages / 3.97 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
8 Pages / 0.11 MByte

IRF9333 Documents

Infineon
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC P-CH 30V 9.2A
Infineon
SOIC P-CH 30V 9.2A
International Rectifier
Trans MOSFET P-CH 30V 9.2A 8Pin SOIC N T/R
International Rectifier
Trans MOSFET P-CH 30V 9.2A 8Pin SOIC N Tube
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