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Part Datasheet Search > MOSFETs > Infineon > IRF9358TRPBF Datasheet PDF
IRF9358TRPBF
Part 3D Model
$ 0.626
IRF9358TRPBF Datasheet PDF (8 Pages)
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IRF9358TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Power Rating
2 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.013 Ω
Polarity
P-Channel
Power Dissipation
2 W
Part Family
IRF9358
Threshold Voltage
1.8 V
Input Capacitance
1740 pF
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
9.2A
Rise Time
7.2 ns
Input Capacitance (Ciss)
1740pF @25V(Vds)
Input Power (Max)
2 W
Fall Time
69 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2 W

IRF9358TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.5 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF9358TRPBF Documents

Infineon
8 Pages / 0.26 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
8 Pages / 0.11 MByte

IRF9358 Documents

Infineon
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC P-CH 30V 9.2A
Infineon
SOIC P-CH 30V 9.2A
International Rectifier
Trans MOSFET P-CH 30V 9.2A 8Pin SOIC T/R
International Rectifier
Trans MOSFET P-CH 30V 9.2A 8Pin SOIC Tube
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