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Part Datasheet Search > MOSFETs > Infineon > IRF9388TRPBF Datasheet PDF
IRF9388TRPBF
Part 3D Model
$ 0.348
IRF9388TRPBF Datasheet PDF (8 Pages)
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IRF9388TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Number of Channels
1 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0085 Ω
Polarity
P-Channel
Power Dissipation
2.5 W
Threshold Voltage
1.8 V
Input Capacitance
1680 pF
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30 V
Continuous Drain Current (Ids)
12A
Rise Time
57 ns
Input Capacitance (Ciss)
1680pF @25V(Vds)
Input Power (Max)
2.5 W
Fall Time
66 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta)

IRF9388TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.5 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF9388TRPBF Documents

Infineon
8 Pages / 0.3 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.14 MByte

IRF9388 Documents

Infineon
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC P-CH 30V 12A
International Rectifier
Trans MOSFET P-CH 30V 12A 8Pin SOIC T/R
International Rectifier
Trans MOSFET P-CH 30V 12A 8Pin SOIC Tube
Infineon
SOIC P-CH 30V 12A
IFC
Trans MOSFET P-CH 30V 12A 8Pin SOIC T/R
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