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Part Datasheet Search > MOSFETs > Infineon > IRF9389TRPBF Datasheet PDF
IRF9389TRPBF
Part 3D Model
$ 0.145
IRF9389TRPBF Datasheet PDF (14 Pages)
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IRF9389TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Power Rating
2 W
Number of Channels
2 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.022 Ω
Polarity
N+P
Power Dissipation
2 W
Threshold Voltage
1.8 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
6.8A/4.6A
Input Capacitance (Ciss)
398pF @15V(Vds)
Input Power (Max)
2 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2 W

IRF9389TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5 mm
Size-Width
3.9 mm
Size-Height
1.5 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF9389TRPBF Documents

Infineon
14 Pages / 0.23 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
12 Pages / 0.68 MByte
Infineon
3 Pages / 0.14 MByte

IRF9389 Documents

Infineon
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC N+P 30V 6.8A/4.6A
International Rectifier
Trans MOSFET N/P-CH 30V 6.8A/4.6A 8Pin SOIC N T/R
Infineon
SOIC N+P 30V 6.8A/4.6A
International Rectifier
Trans MOSFET N/P-CH 30V 6.8A/4.6A 8Pin SOIC N Tube
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