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Part Datasheet Search > MOSFETs > Infineon > IRF9395MTRPBF Datasheet PDF
IRF9395MTRPBF
$ 0.866
IRF9395MTRPBF Datasheet PDF (9 Pages)
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IRF9395MTRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
10 Pin
Case/Package
Direct-FET
Number of Channels
2 Channel
Polarity
P-CH
Power Dissipation
2.1 W
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
14A
Rise Time
142 ns
Input Capacitance (Ciss)
3241pF @15V(Vds)
Input Power (Max)
2.1 W
Fall Time
121 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
2100 mW

IRF9395MTRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Width
5.05 mm
Operating Temperature
-40℃ ~ 150℃ (TJ)

IRF9395MTRPBF Documents

Infineon
9 Pages / 0.24 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
10 Pages / 0.24 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte

IRF9395 Documents

Infineon
Direct-FET P-CH 30V 14A
International Rectifier
T&R; / Dual MOSFET, P-CHANNEL, -30V, -47A, 7MOhm, -4.5V Capable, M-Can Direct FET
Infineon
Direct-FET P-CH 30V 14A
International Rectifier
T&R; / Dual MOSFET, P-CHANNEL, -30V, -47A, 7MOhm, -4.5V Capable, M-Can Direct FET
Infineon
A -30V Dual P-Channel HEXFET Power MOSFET in a DirectFET MC package rated at -14 amperes optimized with low on resistance
International Rectifier
Directfetdual P-channel Power Mosfet
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