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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRF9510PBF Datasheet PDF
IRF9510PBF
$ 0.431
IRF9510PBF Datasheet PDF (9 Pages)
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IRF9510PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Dissipation
43000 mW
Drain to Source Voltage (Vds)
100 V
Rise Time
27 ns
Input Capacitance (Ciss)
200pF @25V(Vds)
Fall Time
17 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
43W (Tc)

IRF9510PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF9510PBF Documents

Vishay Siliconix
9 Pages / 0.26 MByte
Vishay Siliconix
9 Pages / 0.26 MByte
Vishay Siliconix
1 Pages / 0.13 MByte

IRF9510 Documents

VISHAY
Trans MOSFET P-CH 100V 4A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET P-CH 100V 4A TO-220AB
Intersil
3A, 100V, 1.2Ω, P-Channel Power MOSFET
International Rectifier
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Vishay Semiconductor
Trans MOSFET P-CH 100V 4A 3Pin(3+Tab) TO-220AB
VISHAY
TO-220-3P-CH 100V 4A 1.2Ω
International Rectifier
MOSFET P-CH 100V 4A TO-220AB
VISHAY
TO-252-3P-CH 100V 4A 1.2Ω
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 1.2Ω; ID -4A; TO-220AB; PD 43W; VGS +/-20V
VISHAY
TO-252-3P-CH 100V 4A 1.2Ω
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