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Part Datasheet Search > MOSFETs > Vishay Semiconductor > IRF9510STRLPBF Datasheet PDF
IRF9510STRLPBF
$ 0.475
IRF9510STRLPBF Datasheet PDF (9 Pages)
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IRF9510STRLPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Polarity
P-Channel
Power Dissipation
3700 mW
Drain to Source Voltage (Vds)
-100 V
Continuous Drain Current (Ids)
-4.00 A
Rise Time
27 ns
Input Capacitance (Ciss)
200pF @25V(Vds)
Fall Time
17 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3700 mW

IRF9510STRLPBF Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Length
10.67 mm
Size-Width
9.65 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 175℃

IRF9510STRLPBF Documents

Vishay Semiconductor
9 Pages / 0.16 MByte
Vishay Semiconductor
9 Pages / 0.16 MByte

IRF9510 Documents

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Trans MOSFET P-CH 100V 4A 3Pin(3+Tab) TO-220AB
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3A, 100V, 1.2Ω, P-Channel Power MOSFET
International Rectifier
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Vishay Semiconductor
Trans MOSFET P-CH 100V 4A 3Pin(3+Tab) TO-220AB
VISHAY
TO-220-3P-CH 100V 4A 1.2Ω
International Rectifier
MOSFET P-CH 100V 4A TO-220AB
VISHAY
TO-252-3P-CH 100V 4A 1.2Ω
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 1.2Ω; ID -4A; TO-220AB; PD 43W; VGS +/-20V
VISHAY
TO-252-3P-CH 100V 4A 1.2Ω
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