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Part Datasheet Search > P Channel MOSFET > International Rectifier > IRF9520NPBF Datasheet PDF
IRF9520NPBF
$ 0.378
IRF9520NPBF Datasheet PDF (9 Pages)
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IRF9520NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
-100 V
Current Rating
-6.80 A
Case/Package
TO-220-3
Polarity
P-Channel
Power Dissipation
48 W
Part Family
IRF9520N
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
-100 V
Continuous Drain Current (Ids)
-6.80 A
Rise Time
47.0 ns
Input Capacitance (Ciss)
350pF @25V(Vds)
Input Power (Max)
48 W

IRF9520NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail, Tube

IRF9520NPBF Documents

International Rectifier
9 Pages / 0.09 MByte
International Rectifier
20 Pages / 2.6 MByte
International Rectifier
8 Pages / 0.15 MByte

IRF9520 Documents

International Rectifier
Trans MOSFET P-CH Si 100V 6A 3Pin(3+Tab) TO-220AB
Intersil
Trans MOSFET P-CH 100V 6A 3Pin(3+Tab) TO-220AB Trans MOSFET P-CH 100V 6A 3Pin(3+Tab) TO-220AB Trans MOSFET P-CH 100...
Vishay Siliconix
MOSFET P-CH 100V 6.8A TO-220AB
VISHAY
Trans MOSFET P-CH 100V 6.8A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET P-CH 100V 6.8A 3Pin(3+Tab) TO-220AB
Harris
Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Fairchild
Trans MOSFET P-CH Si 100V 6A 3Pin(3+Tab) TO-220AB
Infineon
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Samsung
Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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