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IRF9520SPBF
$ 1.184
IRF9520SPBF Datasheet PDF (9 Pages)
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IRF9520SPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
600 mΩ
Polarity
P-Channel
Power Dissipation
3.7 W
Drain to Source Voltage (Vds)
-100 V
Continuous Drain Current (Ids)
-6.80 A
Operating Temperature (Max)
175 ℃
Power Dissipation (Max)
3.7W (Ta), 60W (Tc)

IRF9520SPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Minimum Packing Quantity
2000

IRF9520SPBF Documents

VISHAY
9 Pages / 0.16 MByte
VISHAY
9 Pages / 0.16 MByte
VISHAY
3 Pages / 0.06 MByte

IRF9520 Documents

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Fairchild
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Infineon
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Samsung
Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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