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Part Datasheet Search > MOSFETs > Infineon > IRF9530NPBF Datasheet PDF
IRF9530NPBF
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IRF9530NPBF Datasheet PDF (9 Pages)
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IRF9530NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
79 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.2 Ω
Polarity
P-CH
Power Dissipation
79 W
Threshold Voltage
4 V
Input Capacitance
760 pF
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
14A
Rise Time
58 ns
Input Capacitance (Ciss)
760pF @25V(Vds)
Input Power (Max)
79 W
Fall Time
46 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
79W (Tc)

IRF9530NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Size-Length
10.54 mm
Size-Width
4.4 mm
Size-Height
8.77 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF9530NPBF Documents

Infineon
9 Pages / 0.22 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
10 Pages / 0.17 MByte
Infineon
1 Pages / 0.14 MByte

IRF9530 Documents

VISHAY
Trans MOSFET P-CH 100V 12A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET P-CH 100V 12A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET P-CH 100V 12A TO-220AB
Intersil
Mosfet p-Ch 100V 14A
International Rectifier
100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Samsung
P-CHANNEL POWER MOSFETS
Harris
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Infineon
100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Fairchild
Trans MOSFET P-CH Si 100V 12A 3Pin(3+Tab) TO-220AB
Semelab
9.3A, 100V, 0.36ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, METAL, TO-220M, 3 PIN
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