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IRF9530NPBF
$ 0.472
IRF9530NPBF Datasheet PDF (10 Pages)
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IRF9530NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
-100 V
Current Rating
-14.0 A
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.2 Ω
Polarity
P-Channel
Power Dissipation
79 W
Part Family
IRF9530N
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
-100 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
-14.0 A
Rise Time
58.0 ns
Input Capacitance (Ciss)
760pF @25V(Vds)
Input Power (Max)
79 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
79000 mW

IRF9530NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.54 mm
Size-Height
15.24 mm
Operating Temperature
-55℃ ~ 175℃

IRF9530NPBF Documents

International Rectifier
10 Pages / 0.21 MByte
International Rectifier
20 Pages / 2.6 MByte
International Rectifier
8 Pages / 0.11 MByte
International Rectifier
5 Pages / 0.04 MByte

IRF9530 Documents

VISHAY
Trans MOSFET P-CH 100V 12A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET P-CH 100V 12A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET P-CH 100V 12A TO-220AB
Intersil
Mosfet p-Ch 100V 14A
International Rectifier
100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Samsung
P-CHANNEL POWER MOSFETS
Harris
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Infineon
100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Fairchild
Trans MOSFET P-CH Si 100V 12A 3Pin(3+Tab) TO-220AB
Semelab
9.3A, 100V, 0.36ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, METAL, TO-220M, 3 PIN
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