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IRF9540NPBF
$ 0.529
IRF9540NPBF Datasheet PDF (9 Pages)
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IRF9540NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
-100 V
Current Rating
-23.0 A
Case/Package
TO-220-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
0.117 Ω
Polarity
P-Channel
Power Dissipation
140 W
Part Family
IRF9540N
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
-100 V
Continuous Drain Current (Ids)
-23.0 A
Rise Time
67.0 ns
Thermal Resistance
62℃/W (RθJC)
Input Capacitance (Ciss)
1300pF @25V(Vds)
Input Power (Max)
140 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃

IRF9540NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail, Tube
Size-Length
10.54 mm
Size-Width
4.4 mm
Size-Height
15.24 mm
Operating Temperature
-55℃ ~ 175℃

IRF9540NPBF Documents

International Rectifier
9 Pages / 0.9 MByte
International Rectifier
10 Pages / 0.13 MByte
International Rectifier
37 Pages / 2.01 MByte
International Rectifier
5 Pages / 0.04 MByte

IRF9540 Documents

International Rectifier
100V 19A Single P Channel HEXFET Power MOSFET SO
Intersil
19A, 100V, 0.2Ω, P-Channel Power MOSFETs
VISHAY
Trans MOSFET P-CH 100V 19A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET P-CH 100V 19A 3Pin(3+Tab) TO-220AB
Fairchild
Trans MOSFET P-CH Si 100V 19A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET P-CH 100V 19A TO-220AB
Samsung
100V, P-channel power MOSFET
Harris
P-CHANNEL POWER MOSFETS
Vishay Intertechnology
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Infineon
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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