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Part Datasheet Search > MOSFETs > International Rectifier > IRF9540NSPBF Datasheet PDF
IRF9540NSPBF
$ 0.682
IRF9540NSPBF Datasheet PDF (11 Pages)
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IRF9540NSPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.117 Ω
Polarity
P-Channel
Power Dissipation
3.1 W
Part Family
IRF9540NS
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
-23.0 A
Input Capacitance (Ciss)
1450pF @25V(Vds)
Input Power (Max)
3.1 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

IRF9540NSPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.67 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 150℃

IRF9540NSPBF Documents

International Rectifier
11 Pages / 0.31 MByte
International Rectifier
12 Pages / 0.32 MByte
International Rectifier
37 Pages / 2.01 MByte
International Rectifier
6 Pages / 0.15 MByte

IRF9540 Documents

International Rectifier
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Vishay Semiconductor
Trans MOSFET P-CH 100V 19A 3Pin(3+Tab) TO-220AB
Fairchild
Trans MOSFET P-CH Si 100V 19A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET P-CH 100V 19A TO-220AB
Samsung
100V, P-channel power MOSFET
Harris
P-CHANNEL POWER MOSFETS
Vishay Intertechnology
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Infineon
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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