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Part Datasheet Search > MOSFETs > Infineon > IRF9540NSPBF Datasheet PDF
IRF9540NSPBF
$ 0.498
IRF9540NSPBF Datasheet PDF (11 Pages)
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IRF9540NSPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Rating
3.8 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.117 Ω
Polarity
P-Channel
Power Dissipation
140 W
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
23A
Rise Time
67 ns
Input Capacitance (Ciss)
1450pF @25V(Vds)
Input Power (Max)
3.1 W
Fall Time
51 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3800 mW

IRF9540NSPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.67 mm
Size-Width
9.65 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF9540NSPBF Documents

Infineon
11 Pages / 0.31 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
9 Pages / 0.14 MByte

IRF9540 Documents

International Rectifier
100V 19A Single P Channel HEXFET Power MOSFET SO
Intersil
19A, 100V, 0.2Ω, P-Channel Power MOSFETs
VISHAY
Trans MOSFET P-CH 100V 19A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET P-CH 100V 19A 3Pin(3+Tab) TO-220AB
Fairchild
Trans MOSFET P-CH Si 100V 19A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET P-CH 100V 19A TO-220AB
Samsung
100V, P-channel power MOSFET
Harris
P-CHANNEL POWER MOSFETS
Vishay Intertechnology
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Infineon
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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