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Part Datasheet Search > MOSFETs > Infineon > IRF9540NSTRRPBF Datasheet PDF
IRF9540NSTRRPBF
$ 0.464
IRF9540NSTRRPBF Datasheet PDF (11 Pages)
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IRF9540NSTRRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Rating
3.8 W
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
117 mΩ
Polarity
P-Channel
Power Dissipation
3.8 W
Threshold Voltage
4 V
Input Capacitance
1450 pF
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
23A
Rise Time
67 ns
Input Capacitance (Ciss)
1450pF @25V(Vds)
Input Power (Max)
3.1 W
Fall Time
51 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
3.1W (Ta), 110W (Tc)

IRF9540NSTRRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Size-Length
10.67 mm
Size-Width
6.22 mm
Size-Height
2.3 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF9540NSTRRPBF Documents

Infineon
11 Pages / 0.31 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte

IRF9540 Documents

International Rectifier
100V 19A Single P Channel HEXFET Power MOSFET SO
Intersil
19A, 100V, 0.2Ω, P-Channel Power MOSFETs
VISHAY
Trans MOSFET P-CH 100V 19A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET P-CH 100V 19A 3Pin(3+Tab) TO-220AB
Fairchild
Trans MOSFET P-CH Si 100V 19A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET P-CH 100V 19A TO-220AB
Samsung
100V, P-channel power MOSFET
Harris
P-CHANNEL POWER MOSFETS
Vishay Intertechnology
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Infineon
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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