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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRF9610SPBF Datasheet PDF
IRF9610SPBF
$ 0.838
IRF9610SPBF Datasheet PDF (10 Pages)
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IRF9610SPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TO-263-3
Drain to Source Resistance (on) (Rds)
3 Ω
Power Dissipation
3W (Ta), 20W (Tc)
Drain to Source Voltage (Vds)
200 V
Input Capacitance (Ciss)
170pF @25V(Vds)
Power Dissipation (Max)
3W (Ta), 20W (Tc)

IRF9610SPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF9610SPBF Documents

Vishay Siliconix
10 Pages / 0.19 MByte

IRF9610 Documents

VISHAY
TO-220AB P-CH 200V 1.8A
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-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
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MOSFET P-CH 200V 1.8A TO-220AB
Vishay Semiconductor
Trans MOSFET P-CH 200V 1.8A 3Pin(3+Tab) TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
IRF
Power MOSFET(Vdss=-200V, Rds(on)=3Ω, Id=-1.8A)
VISHAY
TO-220-3P-CH 200V 1.8A 3Ω
VISHAY
TO-252-3P-CH 200V 1.8A 3Ω
Vishay Semiconductor
VISHAY IRF9610SPBF MOSFET Transistor, P Channel, -1.8A, -200V, 3Ω, -10V, -4V
Vishay Siliconix
MOSFET P-CH 200V 1.8A D2PAK
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