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Part Datasheet Search > MOSFETs > International Rectifier > IRF9630PBF Datasheet PDF
IRF9630PBF
$ 0.343
IRF9630PBF Datasheet PDF (9 Pages)
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IRF9630PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
-200 V
Current Rating
-6.50 A
Case/Package
TO-220
Drain to Source Resistance (on) (Rds)
800 mΩ
Polarity
P-Channel
Power Dissipation
74 W
Threshold Voltage
4 V
Breakdown Voltage (Drain to Source)
-200 V
Continuous Drain Current (Ids)
-6.50 A
Rise Time
27 ns
Fall Time
24 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
74000 mW

IRF9630PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk
Operating Temperature
-55℃ ~ 150℃

IRF9630PBF Documents

International Rectifier
9 Pages / 0.17 MByte
International Rectifier
9 Pages / 0.26 MByte

IRF9630 Documents

International Rectifier
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package.
Vishay Siliconix
MOSFET P-CH 200V 6.5A TO-220AB
Vishay Semiconductor
Trans MOSFET P-CH 200V 6.5A 3Pin(3+Tab) TO-220AB
VISHAY
Trans MOSFET P-CH 200V 6.5A 3Pin(3+Tab) TO-220AB
Intersil
Trans MOSFET P-CH 200V 6.5A 3Pin(3+Tab) TO-220AB Trans MOSFET P-CH 200V 6.5A 3Pin(3+Tab) TO-220AB Trans MOSFET P-CH...
Samsung
200V, P-channel power MOSFET
Fairchild
Trans MOSFET P-CH Si 200V 6.5A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=-200V, Rds(on)=0.8Ω, Id=-6.5A)
VISHAY
TO-220-3P-CH 200V 6.5A 800mΩ
VISHAY
TO-252-3P-CH 200V 12A 300mΩ
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