IRF9952PBF Datasheet PDF - Infineon

●The IRF9952PBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infra-red or wave soldering techniques.

● Generation V technology

● Ultra low ON-resistance

● Surface-mount device

● Very low gate charge and switching losses

● Fully avalanche rated