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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRF9Z14PBF Datasheet PDF
IRF9Z14PBF
$ 0.499
IRF9Z14PBF Datasheet PDF (9 Pages)
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IRF9Z14PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-220-3
Power Dissipation
43000 mW
Rise Time
63 ns
Input Capacitance (Ciss)
270pF @25V(Vds)
Fall Time
31 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
43W (Tc)

IRF9Z14PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.41 mm
Size-Width
4.7 mm
Size-Height
15.49 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF9Z14PBF Documents

Vishay Siliconix
9 Pages / 0.26 MByte
Vishay Siliconix
9 Pages / 0.26 MByte
Vishay Siliconix
1 Pages / 0.13 MByte

IRF9Z14 Documents

Vishay Siliconix
MOSFET P-CH 60V 6.7A TO-220AB
VISHAY
TO-220AB P-CH 60V 6.7A
International Rectifier
-60V Single P-Channel HEXFET Power MOSFET in a TO-220AB packagel
Vishay Semiconductor
Trans MOSFET P-CH 60V 6.7A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=-60V, Rds(on)=0.5Ω, Id=-6.7A)
VISHAY
TO-220-3P-CH 60V 6.7A 500mΩ
VISHAY
TO-252-3P-CH 60V 6.7A 500mΩ
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.5Ω; ID -6.7A; TO-220AB; PD 43W; VGS +/-20V
VISHAY
TO-252-3P-CH 60V 6.7A 500mΩ
Vishay Siliconix
MOSFET P-CH 60V 6.7A TO-220AB
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