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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRF9Z20PBF Datasheet PDF
IRF9Z20PBF
$ 0.892
IRF9Z20PBF Datasheet PDF (8 Pages)
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IRF9Z20PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Dissipation
40000 mW
Drain to Source Voltage (Vds)
50 V
Rise Time
57 ns
Input Capacitance (Ciss)
480pF @25V(Vds)
Fall Time
26 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
40W (Tc)

IRF9Z20PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF9Z20PBF Documents

Vishay Siliconix
8 Pages / 0.36 MByte
Vishay Siliconix
7 Pages / 0.12 MByte
Vishay Siliconix
1 Pages / 0.13 MByte

IRF9Z20 Documents

International Rectifier
MOSFET P-CH 50V 9.7A TO-220AB
Vishay Siliconix
Trans MOSFET P-CH 50V 9.7A 3Pin(3+Tab) TO-220AB
VISHAY
TO-220AB P-CH 50V 9.7A
Vishay Semiconductor
Trans MOSFET P-CH 50V 9.7A 3Pin(3+Tab) TO-220AB
IRF
P-CHANNEL 50V POWER MOSFETs
VISHAY
TO-220-3P-CH 50V 9.7A 280mΩ
Vishay Semiconductor
Trans MOSFET P-CH 50V 9.7A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
Trans MOSFET P-CH 50V 9.7A 3Pin(3+Tab) TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 9.7A I(D), 50V, 0.28Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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