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IRF9Z20PBF Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

TO-220-3

Description:

Trans MOSFET P-CH 50V 9.7A 3Pin(3+Tab) TO-220AB

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IRF9Z20PBF Datasheet PDF (7 Pages)

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IRF9Z20PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Drain to Source Resistance (on) (Rds)

0.28 Ω

Polarity

P-Channel

Power Dissipation

40 W

Drain to Source Voltage (Vds)

-50.0 V

Continuous Drain Current (Ids)

-9.70 A

Rise Time

57 ns

Fall Time

25 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

40 W

IRF9Z20PBF Size & Package

TYPE

DESCRIPTION

Packaging

Tube

Size-Length

10.51 mm

Size-Width

4.65 mm

Size-Height

15.49 mm

Operating Temperature

-55℃ ~ 150℃

IRF9Z20PBF Environmental

IRF9Z20PBF Documents

IRF9Z20PBF Other Datasheet PDF

Vishay Semiconductor

7 Pages / 0.12 MByte

IRF9Z20 Documents

IRF9Z20 Datasheet PDF

International Rectifier

MOSFET P-CH 50V 9.7A TO-220AB

IRF9Z20 Datasheet PDF

Vishay Siliconix

Trans MOSFET P-CH 50V 9.7A 3Pin(3+Tab) TO-220AB

IRF9Z20 Datasheet PDF

VISHAY

TO-220AB P-CH 50V 9.7A

IRF9Z20 Datasheet PDF

Vishay Semiconductor

Trans MOSFET P-CH 50V 9.7A 3Pin(3+Tab) TO-220AB

IRF9Z20 Datasheet PDF

IRF

P-CHANNEL 50V POWER MOSFETs

IRF9Z20PBF Datasheet PDF

VISHAY

TO-220-3P-CH 50V 9.7A 280mΩ

IRF9Z20PBF Datasheet PDF

Vishay Semiconductor

Trans MOSFET P-CH 50V 9.7A 3Pin(3+Tab) TO-220AB

IRF9Z20PBF Datasheet PDF

Vishay Siliconix

Trans MOSFET P-CH 50V 9.7A 3Pin(3+Tab) TO-220AB

IRF9Z20PBF Datasheet PDF

Vishay Intertechnology

Power Field-Effect Transistor, 9.7A I(D), 50V, 0.28Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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