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Part Datasheet Search > MOSFETs > International Rectifier > IRF9Z24NLPBF Datasheet PDF
IRF9Z24NLPBF
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IRF9Z24NLPBF Datasheet PDF (11 Pages)
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IRF9Z24NLPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
-55.0 V
Current Rating
-12.0 A
Case/Package
TO-262-3
Polarity
P-Channel
Part Family
IRF9Z24NL
Drain to Source Voltage (Vds)
55 V
Continuous Drain Current (Ids)
12.0 A
Rise Time
55.0 ns
Input Capacitance (Ciss)
350pF @25V(Vds)
Input Power (Max)
3.8 W

IRF9Z24NLPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube

IRF9Z24NLPBF Documents

International Rectifier
11 Pages / 0.38 MByte
International Rectifier
10 Pages / 0.37 MByte

IRF9Z24 Documents

International Rectifier
MOSFET P-CH 60V 11A TO-220AB
VISHAY
MOSFET P-CH 60V 11A TO-220AB
Vishay Siliconix
MOSFET P-CH 60V 11A TO-220AB
Samsung
P-CHANNEL POWER MOSFETs
Vishay Semiconductor
MOSFET P-CH 60V 11A TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Fairchild
Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Infineon
Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
IRF
POWER MOSFET
Infineon
TO-220AB P-CH 55V 12A
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