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Part Datasheet Search > MOSFETs > VISHAY > IRF9Z30PBF Datasheet PDF
IRF9Z30PBF
$ 1.645
IRF9Z30PBF Datasheet PDF (8 Pages)
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IRF9Z30PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.093 Ω
Polarity
P-Channel
Power Dissipation
74 W
Drain to Source Voltage (Vds)
50 V
Continuous Drain Current (Ids)
-18.0 A
Rise Time
110 ns
Input Capacitance (Ciss)
900pF @25V(Vds)
Input Power (Max)
74 W
Fall Time
64 ns
Operating Temperature (Max)
150 ℃
Power Dissipation (Max)
74W (Tc)

IRF9Z30PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃
Minimum Packing Quantity
50

IRF9Z30PBF Documents

VISHAY
8 Pages / 0.25 MByte
VISHAY
3 Pages / 0.14 MByte

IRF9Z30 Documents

Vishay Siliconix
MOSFET P-CH 50V 18A TO-220AB
International Rectifier
P-CHANNEL 50V POWER MOSFETS
Vishay Semiconductor
Trans MOSFET P-CH 50V 18A 3Pin(3+Tab) TO-220AB
VISHAY
TO-220AB P-CH 50V 18A
VISHAY
TO-220-3P-CH 50V 18A 140mΩ
Vishay Semiconductor
Trans MOSFET P-CH 50V 18A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET P-CH 50V 18A TO-220AB
International Rectifier
Power Field-Effect Transistor, 18A I(D), 50V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
VISHAY
MOSFET P-CH 50V 18A D2PAK
VISHAY
MOSFET P-CH 50V 18A D2PAK
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