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IRFB18N50K
$ 0.785
IRFB18N50K Datasheet PDF (10 Pages)
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IRFB18N50K Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
290 mΩ
Polarity
N-CH
Drain to Source Voltage (Vds)
500 V
Continuous Drain Current (Ids)
17A
Rise Time
60 ns
Input Capacitance (Ciss)
2830pF @25V(Vds)
Fall Time
30 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
220000 mW

IRFB18N50K Size & Package

TYPE
DESCRIPTION
Minimum Packing Quantity
50

IRFB18N50K Documents

VISHAY
10 Pages / 0.29 MByte
VISHAY
10 Pages / 0.16 MByte

IRFB18N50 Documents

VISHAY
TO-220-3 N-CH 500V 17A 290mΩ
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.26Ω; ID 17A; TO-220AB; PD 220W; VGS +/-30V
VISHAY
TO-220-3 N-CH 500V 17A 290mΩ
International Rectifier
MOSFET N-CH 500V 17A TO-220AB
Vishay Siliconix
Mosfet n-Ch 500V 17A To-220ab
International Rectifier
TO-220
Vishay Semiconductor
Trans MOSFET N-CH 500V 17A 3Pin(3+Tab) TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 17A I(D), 500V, 0.29Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Kersemi Electronic
Power MOSFET(Vdss=500V/ Rds(on)max=0.26Ω/ Id=27A)
Kersemi Electronic
Power MOSFET(Vdss=500V/ Rds(on)max=0.26Ω/ Id=27A)
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