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IRFB20N50KPBF
$ 3.971
IRFB20N50KPBF Datasheet PDF (9 Pages)
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IRFB20N50KPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.21 Ω
Polarity
N-Channel
Power Dissipation
280 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
500 V
Continuous Drain Current (Ids)
20.0 A
Rise Time
74 ns
Input Capacitance (Ciss)
2870pF @25V(Vds)
Input Power (Max)
280 W
Fall Time
33 ns
Operating Temperature (Max)
150 ℃
Power Dissipation (Max)
280W (Tc)

IRFB20N50KPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube

IRFB20N50KPBF Documents

VISHAY
9 Pages / 0.3 MByte
VISHAY
9 Pages / 0.31 MByte

IRFB20N50 Documents

VISHAY
Trans MOSFET N-CH 500V 20A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 500V 20A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
Trans MOSFET N-CH 500V 20A 3Pin(3+Tab) TO-220AB
International Rectifier
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International Rectifier
MOSFET N-CH 500V 20A TO-220AB
VISHAY
TO-220-3 N-CH 500V 20A 250mΩ
Vishay Intertechnology
Power Field-Effect Transistor, 20A I(D), 500V, 0.25Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Vishay Semiconductor
Trans MOSFET N-CH 500V 20A 3Pin(3+Tab) TO-220AB
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