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Part Datasheet Search > MOSFETs > Infineon > IRFB23N20DPBF Datasheet PDF
IRFB23N20DPBF
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IRFB23N20DPBF Datasheet PDF (12 Pages)
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IRFB23N20DPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
170 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.1 Ω
Polarity
N-CH
Power Dissipation
170 W
Threshold Voltage
5.5 V
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Continuous Drain Current (Ids)
24A
Rise Time
32 ns
Input Capacitance (Ciss)
1960pF @25V(Vds)
Input Power (Max)
3.8 W
Fall Time
16 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.8W (Ta), 170W (Tc)

IRFB23N20DPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10 mm
Size-Width
4.4 mm
Size-Height
15.65 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFB23N20DPBF Documents

Infineon
12 Pages / 0.27 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte

IRFB23N20 Documents

Infineon
TO-220AB N-CH 200V 24A
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.1Ω; ID 24A; TO-220AB; PD 170W; VGS +/-30V
Infineon
TO-220AB N-CH 200V 24A
International Rectifier
MOSFET N-CH 200V 24A TO-220AB
IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.1Ω, Id=24A)
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