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Part Datasheet Search > MOSFETs > Infineon > IRFB4019PBF Datasheet PDF
IRFB4019PBF
$ 0.717
IRFB4019PBF Datasheet PDF (8 Pages)
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IRFB4019PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
80 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
80 mΩ
Polarity
N-Channel
Power Dissipation
80 W
Threshold Voltage
4.9 V
Drain to Source Voltage (Vds)
150 V
Breakdown Voltage (Drain to Source)
150 V
Continuous Drain Current (Ids)
17A
Rise Time
13 ns
Input Capacitance (Ciss)
800pF @50V(Vds)
Input Power (Max)
80 W
Fall Time
7.8 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
80W (Tc)

IRFB4019PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.66 mm
Size-Width
4.82 mm
Size-Height
9.02 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFB4019PBF Documents

Infineon
8 Pages / 0.27 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte

IRFB4019 Documents

International Rectifier
MOSFET N-CH 150V 17A TO-220AB
Infineon
150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB Package
Infineon
TO-220AB N-CH 150V 17A
International Rectifier
Trans MOSFET N-CH 150V 17A 3Pin(3+Tab) TO-220AB Tube
Vishay Semiconductor
MOSFET N-CH 150V 17A TO-220AB
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